Author | Title | Year | Journal/Proceedings | Reftype | DOI/URL |
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Young, R.J., Buxbaum, A., Peterson, B. and Schampers, R. | Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging | 2008 | ISTFA 2008 | conference | DOI URL |
Abstract: Scanning transmission electron microscopy with scanning electron microscopes
(SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques. |
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BibTeX:
@conference{young08, author = {Young, R. J. and Buxbaum, A. and Peterson, B. and Schampers, R.}, title = {Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging}, booktitle = {ISTFA 2008}, publisher = {ASM International}, year = {2008}, url = {http://www.mc-set.com/docs/sem_stem_imaging_R_Young_FEI.pdf}, doi = {https://doi.org/10.1361/cp2008istfa320} } |
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Napchan, E. | Backscattered Electrons in the SEM [BibTeX] |
2001 | Microscopy and Analysis Vol. 2001, pp. 9-11 |
article | URL |
BibTeX:
@article{micana01, author = {Napchan, E.}, title = {Backscattered Electrons in the SEM}, journal = {Microscopy and Analysis}, year = {2001}, volume = {2001}, pages = {9-11}, url = {http://www.mc-set.com/docs/micana01.pdf} } |
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Holt, D.B., Napchan, E., Lazzarini, L., Salviati, G. and Urchulutegui, M. | Beam-induced dislocations and their CL contrast | 1993 | Vol. 134IOP Conference Series Number 134, pp. 661-666 |
conference | URL |
Abstract: Dislocations induced by high SEM beam currents in GaAs were studied
by TEM and emission CL. They were found to consist of bowed segments and confirmed to have [001] Burgers vectors. The capacity of different SEMs to induce dislocations varied greatly. Methods for recording CL contrast profiles and a Monte Carlo based program for CL calculations are presented. |
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BibTeX:
@conference{msm93, author = {Holt, D. B. and Napchan, E. and Lazzarini, L. and Salviati, G. and Urchulutegui, M.}, title = {Beam-induced dislocations and their CL contrast}, booktitle = {IOP Conference Series Number 134}, publisher = {Institute of Physics, UK}, year = {1993}, volume = {134}, pages = {661-666}, url = {http://www.mc-set.com/docs/msm93.pdf} } |
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Bonard, J.M., Ganiere, J.D., Akamatsu, B., Araujo, D. and Reinhart, F.K. | Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by and electron beam in Al0.4Ga0.6As [BibTeX] |
1996 | J. Appl. Phys. Vol. 79(11), pp. 8693-8703 |
article | URL |
BibTeX:
@article{BonardJM1996, author = {Bonard, J. M. and Ganiere, J. D. and Akamatsu, B. and Araujo, D. and Reinhart, F. K.}, title = {Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by and electron beam in Al0.4Ga0.6As}, journal = {J. Appl. Phys.}, year = {1996}, volume = {79}, number = {11}, pages = {8693-8703}, url = {https://www.mc-set.com/docs/bonard.pdf} } |
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Development of hydrogen loading system and characterization of tritiated metallic films for betavoltaic batteries | 2014 | proceedings | URL | ||
Abstract: Currently, no portable power source extends beyond 10 years in extreme temperature environments, e.g. -40°C to 80°C. onventional electrochemical batteries do not perform well at extreme temperatures and rarely operate longer than 5 years; thermally induced performance degradation is common. However, commercial betavoltaic batteries can operate in excess of 10 years over extreme temperatures. Potential applications for low-power betavoltaic sources may be found in distributed power systems, sensors, remote power, and biomedical devices & implants. Betavoltaic technology is rapidly maturing, giving rise to numerous areas of research and development, e.g. beta source and semiconductor efficiency.
This study presents an update on some current aspects of betavoltaics, challenges existing within the technology, and research and development currently being conducted. The substrate material that serves as the sync or storage medium for the radioisotope source has become a significant challenge due to issues associated with loading techniques, thin-film roperties, beta-particle interaction, and defect damage. Recent betavoltaic designs invoking tritium stored as tritides in titanium and scandium demonstrated a number of practical difficulties yielding to material damage and inconsistent tritium concentrations. Various material modifications and hydrogen loading techniques are being evaluated to proof new methods, materials and designs that result in less expensive tritiated foils with consistent concentrations. Modeling experiments are being conducted to verify and validate the loading and storage mechanism of tritium in the metal hydrides. |
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BibTeX:
@proceedings{adams_2014,, title = {Development of hydrogen loading system and characterization of tritiated metallic films for betavoltaic batteries}, year = {2014}, url = {https://www.mc-set.com/docs/Adams_hydrogen_loading_Final ICONE22-30174.pdf} } |
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Napchan, E. | Electron And Photon-Matter Interaction: Energy Dissipation And Injection Level | 1989 | Revue De Physique Appliquee Vol. 24(6), pp. C6-15 C6-29 |
article | URL |
Abstract: Energy dissipation by a light or electron beam inside a specimen is
the primary parameter responsible for generating signals used to characterize the sample under investigation. The commonly used semi-empirical descriptions of this energy dissipation profile are presented. Their limitations in dealing with particular experimental conditions, such as multi-layer specimens anQ--varying beam tilt angles, make it necessary to evaluate the beam-matter interaction parameters by methods such as Monte Carlo simulations. The physical principles of these simulations are introduced along with the presentation of computational details of a fast calculation program developed by the author, in particular for dealing with the evaluation of energy deposition: Some of the applications of calculated energy dissipation profiles and other data· calculated in the beam induced assessment of device properties are outlined, along with examples comparing simulation results to experimental data. |
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BibTeX:
@article{biads88, author = {Napchan, E.}, title = {Electron And Photon-Matter Interaction: Energy Dissipation And Injection Level}, journal = {Revue De Physique Appliquee}, year = {1989}, volume = {24}, number = {6}, pages = {C6-15 C6-29}, url = {http://www.mc-set.com/docs/biads_88_enapchan_ajp-jphyscol198950C602.pdf} } |
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Farhang, H., Napchan, E. and Blott, B.H. | Electron backscattering and secondary electron emission from carbon targets: comparison of experimental results with Monte Carlo simulations | 1993 | J. Phys. D: Appl. Phys. Vol. 26, pp. 2266-2271 |
article | URL |
Abstract: Electron backscattering (EBS) and secondary electron emission (SEE)
yield have been measured for bulk carbon with a density of 1.8 g cm-3, for primary electron energies in the range from 100 to 500 eV and from 12 to 1000 eV respectively. The backscattering results were in agreement with an empirical formula to within 2%. The SEE yield value was 0.04 at lowest measured energy (12 eV) and reached a maximum value of 0.54 at about 300 eV. The backscattering coefficients and SEE yield have also been calculated using a Monte Carlo simulation for the energy range from 12 to 1000 eV. In the simulation, two different energy loss characteristics were used. The first was obtained from a set of optical data and gave good agreement with the experimental SEE yield but poor agreement with the backscattering data. The second was obtained from a modified Bethe energy loss function which fitted the backscattering data well. Using the Bethe loss function for each primary electron, the SEE yield was calculated for every path length between scattering events by dividing the primary electron energy lost per unit path length by the average energy required to create a secondary electron. The SEE data was fitted on the assumption that the average energy to create a secondary varied with primary electron energy according to a four parameter function. Comparison of the calculated SEE yield with the experimental SEE yield, as a function of incident angle of the primary beam, was good over the energy range from 100 to 500 eV. |
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BibTeX:
@article{farhang93, author = {Farhang, H. and and Napchan, E. and Blott, B. H.}, title = {Electron backscattering and secondary electron emission from carbon targets: comparison of experimental results with Monte Carlo simulations}, journal = {J. Phys. D: Appl. Phys.}, year = {1993}, volume = {26}, pages = {2266-2271}, url = {http://www.mc-set.com/docs/farhang93.pdf} } |
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Napchan, E. | Electron beam dissipation volume effects on lateral and depth probing of semiconducting layers | 2001 | Vol. 169IOP Conference Series Number 169 |
conference | URL |
Abstract: Monte Carlo (MC) simulations of electron trajectories for multi -layered
sample geometries are used for studying the depth and lateral resolution under various experimental conditions. The resulting three-dimensional beam energy dissipation data is used to evaluate depth and radial beam exposure information, which provides an insight into depth and lateral resolution of electron beam techniques. The application of such simulations to compound materials and the various methods used for calculating average parameter values are discussed. Different average value calculation methods can result in significantly different electron doses, the choice of which can not be made a priori without comparison to experimental data. |
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BibTeX:
@conference{msm01, author = {Napchan, E.}, title = {Electron beam dissipation volume effects on lateral and depth probing of semiconducting layers}, booktitle = {IOP Conference Series Number 169}, publisher = {Institute of Physics, UK}, year = {2001}, volume = {169}, url = {http://www.mc-set.com/docs/msm01.pdf} } |
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Holt, D., Napchan, E., Reehal, H., Wang, L. and Summers, S. | Electron Beam Microanalysis of Crystalline Silicon Films Grown on Foreign Substrates for Solar Cells | 2000 | 16th European Photovoltaic Solar Energy Conference, 1-5 May 2000, Glasgow, UK, pp. 1738-1741 | conference | URL |
Abstract: Electron backscattering pattern analysis is a powerful, relatively
new sCaIming electron microscope teclmique that can rapidly detennine the degree of crystallinity e.g. the size and orientation of large numbers of grains and the presence or absence of elastic strain in polycrystalline thin films. By measuring the electron beam induced current in a solar cell for a range of beam energies, the value of the minority carrier ditTusion length at the point of beam impact can be detennined. These teclmiques were used to characterise thin crystalline silicon films and solar cells fonned by electron cyclotron resonance - plasma assisted chemical vapour deposition on a variety of foreign substrates. |
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BibTeX:
@conference{epsc00, author = {Holt, D.B and Napchan, E. and Reehal, H.R.E and Wang, L. and Summers,S.}, title = {Electron Beam Microanalysis of Crystalline Silicon Films Grown on Foreign Substrates for Solar Cells}, booktitle = {16th European Photovoltaic Solar Energy Conference, 1-5 May 2000, Glasgow, UK}, publisher = {James and James (Science Publishers) Ltd.}, year = {2000}, pages = {1738-1741}, url = {http://www.mc-set.com/docs/epsc00.pdf} } |
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Grunbaum, E., Napchan, E., Barkay, Z., Barnham, K., Nelson, J., Foxon, C.T., Roberts, J.S. and Holt, D.B. | Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AIGaAs and GaAs p-i-n solar cells | 1995 | Semicond. Sci. Technol. Vol. 10, pp. 627-633 |
article | URL |
Abstract: A new method of determining the minority carrier diffusion length
in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AIGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature. |
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BibTeX:
@article{grunb95, author = {Grunbaum, E. and Napchan, E. and Barkay, Z. and Barnham, K. and Nelson, J. and Foxon, C. T. and Roberts, J. S. and Holt, D. B.}, title = {Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AIGaAs and GaAs p-i-n solar cells}, journal = {Semicond. Sci. Technol.}, year = {1995}, volume = {10}, pages = {627-633}, url = {http://www.mc-set.com/docs/grunb95.pdf} } |
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Napchan, E. and Joy, D.C. | Experimental electron scattering data: web interface for updating and graphical presentation [BibTeX] |
2006 | Scanning 2006 | conference | URL |
BibTeX:
@conference{SCAN2006_exp_elect_scatter, author = {Napchan, E. and Joy, D. C.}, title = {Experimental electron scattering data: web interface for updating and graphical presentation}, booktitle = {Scanning 2006}, publisher = {FAMS, Inc., Mahwah, N.J., USA}, year = {2006}, url = {http://www.mc-set.com/docs/SCAN2006_exp_elect_scatter.pdf} } |
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Schilling, J. and Kolbe, A.S.U.G.M. | Macroporous silicon membranes as electron and x-ray transmissive windows | 2004 | Applied Physics Letters | article | URL |
Abstract: Macroporous silicon membranes are fabricated whose pores are terminated with 60 nm thin silicon dioxide shells. The transmission of electrons with energies of 5 kV-25 kV through these membranes was investigated reaching a maximum of 22% for 25 kV. Furthermore, the transmission of electromagnetic radiation ranging from the far-infrared to the x-ray region was determined. The results suggest the application of the membrane as window material for electron optics and energy dispersive x-ray detectors. | |||||
BibTeX:
@article{membranes_2004, author = {J. Schilling and A. Schere U. Gosele M. Kolbe}, title = {Macroporous silicon membranes as electron and x-ray transmissive windows}, journal = {Applied Physics Letters}, year = {2004}, url = {https://www.mc-set.com/docs/schilling.pdf} } |
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Klimo, O., Napchan, E. and Limpouch, J. | Monte Carlo calculations of X-rays generation for electron beams with energies up to 500 keVolts | 2003 | Vol. 180IOP Conference Series Number 180 |
conference | URL |
Abstract: The MC-SET Monte Carlo program for simulation of electron trajectories
is being improved by adding X-rays generation calculation for each electron trajectory step. The method uses the 3D (N = 100 elements per dimension) energy deposition matrix and an additional equivalent matrix of average electron energies. These two matrixes provide us all information about an electron energy deposition in the specimen and allow us to carry generalized shell ionization computations and to obtain the 3D distribution of K shell ionization. Simulation results include the number of K-alpha photons per steradian per electron flying out from a spot of electron beam incidence in a specified direction, and information about the depth generation. The simulation can be used for individual elements with different tilt angles and with electron energies up to 500 keV, and for multi-layered specimens. Simulation results are in good greement with experimental results and with other calculations. |
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BibTeX:
@conference{msm03, author = {Klimo, O. and Napchan, E. and Limpouch, J.}, title = {Monte Carlo calculations of X-rays generation for electron beams with energies up to 500 keVolts}, booktitle = {IOP Conference Series Number 180}, publisher = {Institute of Physics, UK}, year = {2003}, volume = {180}, url = {http://www.mc-set.com/docs/msm03.pdf} } |
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Napchan, E. | Monte Carlo Simulation Of Electron Trajectories [BibTeX] |
1992 | European Microscopy And Analysis Vol. 1992, pp. 21-23 |
article | URL |
BibTeX:
@article{eumica92, author = {Napchan, E.}, title = {Monte Carlo Simulation Of Electron Trajectories}, journal = {European Microscopy And Analysis}, year = {1992}, volume = {1992}, pages = {21-23}, url = {http://www.mc-set.com/docs/eumica92.pdf} } |
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Napchan, E. | Monte Carlo simulations of electron trajectories for samples with complex geometries [BibTeX] |
2006 | Scanning 2006 | conference | URL |
BibTeX:
@conference{SCAN2006_mc-set_samples_complex_geometries, author = {Napchan, E.}, title = {Monte Carlo simulations of electron trajectories for samples with complex geometries}, booktitle = {Scanning 2006}, publisher = {FAMS, Inc., Mahwah, N.J., USA}, year = {2006}, url = {http://www.mc-set.com/docs/SCAN2006_mc-set_samples_complex_geometries.pdf} } |
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Napchan, E. and Benarroch, J. | Monte Carlo simulations of electron trajectories for the study of betavoltaic battery configurations [BibTeX] |
2014 | mmc2014 | conference | URL |
BibTeX:
@conference{mmc2104_betavoltaic_simulation, author = {Napchan, E. and Benarroch, J.}, title = {Monte Carlo simulations of electron trajectories for the study of betavoltaic battery configurations}, booktitle = {mmc2014}, publisher = {RMS}, year = {2014}, url = {http://www.mc-set.com/docs/mmc2014_simul_trajectories_betavoltaic.pdf} } |
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Napchan, E. and Lahav, A. | Monte Carlo simulations of SEM work with semiconducting devices [BibTeX] |
2007 | Scanning | conference | URL |
BibTeX:
@conference{SCAN2007_mc-set_semiconducting_devices, author = {Napchan, E. and Lahav, A.}, title = {Monte Carlo simulations of SEM work with semiconducting devices}, booktitle = {Scanning}, publisher = {fams.org}, year = {2007}, url = {http://www.mc-set.com/docs/SCAN2007_mc-set_semiconducting_devices.pdf} } |
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Holt, D.B. and Napchan, E. | Quantifying Scanning Electron Microscopy of Semiconducting Materials | 1993 | Multinational Congress on Electron Microscopy | conference | URL |
Abstract: Progress is being made in the quantification of SEM EBIC and CL through
advances in instrumentation and in the application of Monte Carlo electron trajectory simulation to calculate signals as functions of SEM and materials parameters. Contrast simulation then becomes readily possible also. Recent developments in this field are outlined and some tasks for the future are pointed out. |
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BibTeX:
@conference{parma93, author = {Holt, D. B. and Napchan, E.}, title = {Quantifying Scanning Electron Microscopy of Semiconducting Materials}, booktitle = {Multinational Congress on Electron Microscopy}, year = {1993}, url = {http://www.mc-set.com/docs/parma93.pdf} } |
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Holt, D.B. and Napchan, E. | Quantitation of SEM EBIC and CL Signals Using Monte Carlo Electron-Trajectory Simulations | 1994 | Scanning Vol. 16, pp. 78-86 |
article | URL |
Abstract: A microcomputer Monte Carlo program simulates electron trajectories
in solids and describes the distribution of energy deposited throughout the energy-dissipation (electron-hole pair generation) volume. From this distribution, the electron-be aminduced current or cathodoluminescence signal that will be generated can be calculated for the chosen beam conditions in a multilayer specimen of any geometry and compositions. The use of this program is illustrated by applications (1) to simulate curves of cathodoluminescence intensity versus beam energy for fitting to experimental data to evaluate materials and device parameters, (2) to calculate the energy deposited in each layer of a HEMT structure in which electron-be am-induced current studies are in progress, and (3) to the simulation of defect contrast linescan profiles which are compared to experimental observations. |
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BibTeX:
@article{scan94, author = {Holt, D. B. and Napchan, E.}, title = {Quantitation of SEM EBIC and CL Signals Using Monte Carlo Electron-Trajectory Simulations}, journal = {Scanning}, year = {1994}, volume = {16}, pages = {78-86}, url = {http://www.mc-set.com/docs/scan94.pdf} } |
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Holt, D.B., Napchan, E., Lazzarini, L., Urchulutegui, M. and Salviati, G. | Quantitative studies of beam-induced defects in III - V compounds by cathodoluminescence and transmission electron microscopy | 1994 | Materials Science and Engineering, () Vol. B24, pp. 130-134 |
article | URL |
Abstract: Electron beam currents above about 1 pA induce long straight dislocations
lying just below the surface in (001) wafers of GaAs and InP. These dislocations are of interest in themselves and are well situated for cathodoluminescence (CL) dark contrast studies. Microcomputer Monte Carlo electron trajectory simulation-based programs were written to calculate emitted CL intensities and to simulate defect CL contrast profiles. Series of simulations for increasing beam energies (penetration range) show that the dislocation contrast is a maximum for a certain accelerating voltage which enables the dislocation depth to be determined. The magnitude of the contrast for a given beam energy increases with increasing defect recombination strength which can therefore be identified. The possibility of finding the number of dislocations in individual dark line bundles is discussed. The results of further transmission electron microscopy observations on the beam-induced dislocations are also presented. |
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BibTeX:
@article{mseng94, author = {Holt, D. B. and Napchan, E. and Lazzarini, L. and Urchulutegui, M. and Salviati, G.}, title = {Quantitative studies of beam-induced defects in III - V compounds by cathodoluminescence and transmission electron microscopy}, journal = {Materials Science and Engineering, ()}, year = {1994}, volume = {B24}, pages = {130-134}, url = {http://www.mc-set.com/docs/mseng94.pdf} } |
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Holt, D.B., Napchan, E., Reehal, H. and Toal, S. | SEM EBIC characterization of SiC/Si solar cells | 1999 | Vol. 164IOP Conference Series Number 164, pp. 703-706 |
conference | URL |
Abstract: A number of experimental solar cells with SiC emitters and Si bases,
varying in photovoltaic efficiency from 0.1 to 5.8 %, were examined by EBIC. Defect particles were observed in the cells using EBIC. Evidence was found that suggests that the top contacts on the 0.1 % cell were Schottky not ohmic in character. Quantitative EBIC linescans across these metal fingers were analysed to obtain values for L, the minority carrier diffusion length. |
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BibTeX:
@conference{msm99c, author = {Holt, D. B. and Napchan, E. and Reehal, H. and Toal, S.}, title = {SEM EBIC characterization of SiC/Si solar cells}, booktitle = {IOP Conference Series Number 164}, publisher = {Institute of Physics, UK}, year = {1999}, volume = {164}, pages = {703-706}, url = {http://www.mc-set.com/docs/msm99c.pdf} } |
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Ferranti, S.L.W. and James, C.E. | Theoretical Explanation of the Relationship between Backscattered Electron and X-Ray Linear Attenuation Coefficients in Calcified Tissues | 1997 | Scanning Vol. 19, pp. 541-546 |
article | URL |
Abstract: X-ray absorption and backscattered electron (BSE) microscopies are two commonly used techniques for estimating mineral contents in calcified tissues. The resolution in BSE images is usually higherthan in x-ray images, but
due to the previous lackofgood standards to quantify the grey levels in BSE images ofbones and teeth, x-ray microtomography (XMT) images ofthe same specimens have been used for calibration. However, the physics ofthese two techniques is different: for a specimen with a given composition, the xray linear attenuation coefficient is proportional to density, but there is no such relation with the BSE coefficient. To understand the reason that this calibration appears to be valid, he behaviourofsimulatedbone samples was investigated. I In this, the bone samples were modelled as having three phases: hydroxyapatite (CalO(P04)iOH)2)' protein, and void (either empty or completely filled with polymethylmethacrylate (PMMA), a resin which is usually used for embedding bones and teeth in microscopic studies). The x-ray linearattenuation coefficients (calculated using published data) and the BSE coefficients (calculated using Monte Carlo simulation) were compared for samples of various phase proportions. It was found that the BSE coefficient correlated only with the x-ray attenuation coefficient for samples with PMMA infiltration. This was attributed to the properties ofPMMA (density and mean atomic number) being very similar to those ofthe protein; therefore, the sample behaves like a two-phase system which allows the establishment of a monotonic relation between density and BSE coefficient. With the newly developed standards (brominated and iodinated dimethacrylate esters) for BSE microscopy ofbone, grey levels can be converted to absolute BSE coefficients by linearinterpolation, from which equivalent densities can be determined. |
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BibTeX:
@article{ferranti1997, author = {Ferranti, S. L. W. and James, C. E.}, title = {Theoretical Explanation of the Relationship between Backscattered Electron and X-Ray Linear Attenuation Coefficients in Calcified Tissues}, journal = {Scanning}, year = {1997}, volume = {19}, pages = {541-546}, url = {https://www.mc-set.com/docs/ferranti.pdf} } |
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Wong, F.S.L. and Elliot, J.C. | Theoretical explanation of the relationship between backscattered electron and x-ray linear attenuation coefficients in calcified tissues [BibTeX] |
1997 | Scanning | article | URL |
BibTeX:
@article{WongFS1997, author = {Wong, F. S. L. and Elliot, J. C.}, title = {Theoretical explanation of the relationship between backscattered electron and x-ray linear attenuation coefficients in calcified tissues}, journal = {Scanning}, year = {1997}, url = {https://www.mc-set.com/docs/ferranti.pdf} } |
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Lahav, A. and Napchan, E. | Thin Films Thickness Measurement by Secondary Electrons Contrast [BibTeX] |
2007 | The 41st Annual Scientific Meeting of ISM | conference | URL |
BibTeX:
@conference{ism2007, author = {Lahav, A. and Napchan, E.}, title = {Thin Films Thickness Measurement by Secondary Electrons Contrast}, booktitle = {The 41st Annual Scientific Meeting of ISM}, year = {2007}, url = {http://www.mc-set.com/docs/ism07.pdf} } |
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Napchan, E. | Studies of backscattered electrons in scanning electron microscopy using Monte Carlo simulations | 2001 | Scanning 2001 | conference | URL |