| Author | Title | Year | Journal/Proceedings | Reftype | DOI/URL |
|---|---|---|---|---|---|
| Amin, F., Holt, D.B., Hungerford, G.A., Napchan, E. & Rezazadeh, A. | EBIC studies of heterojunction bipolar transistors | 1999 | IOP Conference Series Number 164, pp. 687-692 | conference | URL |
| Abstract: Measurements on GaAs homo- and heterojunction bipolar transistors followed the approach of Gonzales (1974) who considered the interaction of the two junctions in analysing such devices, The electron beam induced voltage produced across a charge collecting barrier without an electrical contact could be detected by a neighbouring junction. This can be useful for examining regions of integrated circuits to which no direct contact is made. Observations on the two forms of GaAs transistors are presented and discussed. | |||||
BibTeX:
@conference{msm99,
author = {Amin, F. and Holt, D. B. and Hungerford, G. A. and Napchan, E. and Rezazadeh, A.},
title = {EBIC studies of heterojunction bipolar transistors},
booktitle = {IOP Conference Series Number 164},
publisher = {Institute of Physics, UK},
year = {1999},
pages = {687-692},
url = {http://www.mc-set.com/docs/papers/msm99.pdf}
}
|
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| Farhang, H., Napchan, E. & Blott, B.H. | Electron backscattering and secondary electron emission from carbon targets: comparison of experimental results with Monte Carlo simulations | 1993 | J. Phys. D: Appl. Phys. Vol. 26, pp. 2266-2271 |
article | URL |
| Abstract: Electron backscattering (EBS) and secondary electron emission (SEE) yield have been measured for bulk carbon with a density of 1.8 g cm-3, for primary electron energies in the range from 100 to 500 eV and from 12 to 1000 eV respectively. The backscattering results were in agreement with an empirical formula to within 2%. The SEE yield value was 0.04 at lowest measured energy (12 eV) and reached a maximum value of 0.54 at about 300 eV. The backscattering coefficients and SEE yield have also been calculated using a Monte Carlo simulation for the energy range from 12 to 1000 eV. In the simulation, two different energy loss characteristics were used. The first was obtained from a set of optical data and gave good agreement with the experimental SEE yield but poor agreement with the backscattering data. The second was obtained from a modified Bethe energy loss function which fitted the backscattering data well. Using the Bethe loss function for each primary electron, the SEE yield was calculated for every path length between scattering events by dividing the primary electron energy lost per unit path length by the average energy required to create a secondary electron. The SEE data was fitted on the assumption that the average energy to create a secondary varied with primary electron energy according to a four parameter function. Comparison of the calculated SEE yield with the experimental SEE yield, as a function of incident angle of the primary beam, was good over the energy range from 100 to 500 eV. | |||||
BibTeX:
@article{farhang93,
author = {Farhang, H. and and Napchan, E. and Blott, B. H.},
title = {Electron backscattering and secondary electron emission from carbon targets: comparison of experimental results with Monte Carlo simulations},
journal = {J. Phys. D: Appl. Phys.},
year = {1993},
volume = {26},
pages = {2266-2271},
url = {http://www.mc-set.com/docs/papers/farhang93.pdf}
}
|
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| Grunbaum, E., Napchan, E., Barkay, Z., Barnham, K., Nelson, J., Foxon, C.T., Roberts, J.S. & Holt, D.B. | Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AIGaAs and GaAs p-i-n solar cells | 1995 | Semicond. Sci. Technol. Vol. 10, pp. 627-633 |
article | URL |
| Abstract: A new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AIGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature. | |||||
BibTeX:
@article{grunb95,
author = {Grunbaum, E. and and Napchan, E. and Barkay, Z. and Barnham, K. and Nelson, J. and Foxon, C. T. and Roberts, J. S. and Holt, D. B.},
title = {Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AIGaAs and GaAs p-i-n solar cells},
journal = {Semicond. Sci. Technol.},
year = {1995},
volume = {10},
pages = {627-633},
url = {http://www.mc-set.com/docs/papers/grunb95.pdf}
}
|
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| Holt, D., Napchan, E., Reehal, H., Wang, L. & Summers, S. | Electron Beam Microanalysis of Crystalline Silicon Films Grown on Foreign Substrates for Solar Cells | 2000 | 16th European Photovoltaic Solar Energy Conference, 1-5 May 2000, Glasgow, UK, pp. 1738-1741 | conference | URL |
| Abstract: Electron backscattering pattern analysis is a powerful, relatively new sCaIming electron microscope teclmique that can rapidly detennine the degree of crystallinity e.g. the size and orientation of large numbers of grains and the presence or absence of elastic strain in polycrystalline thin films. By measuring the electron beam induced current in a solar cell for a range of beam energies, the value of the minority carrier ditTusion length at the point of beam impact can be detennined. These teclmiques were used to characterise thin crystalline silicon films and solar cells fonned by electron cyclotron resonance - plasma assisted chemical vapour deposition on a variety of foreign substrates. | |||||
BibTeX:
@conference{epsc00,
author = {Holt, D.B and Napchan, E. and Reehal, H.R.E and Wang, L. and Summers,S.},
title = {Electron Beam Microanalysis of Crystalline Silicon Films Grown on Foreign Substrates for Solar Cells},
booktitle = {16th European Photovoltaic Solar Energy Conference, 1-5 May 2000, Glasgow, UK},
year = {2000},
pages = {1738-1741},
url = {http://www.mc-set.com/docs/papers/epsc00.pdf}
}
|
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| Holt, D.B. & Napchan, E. | Quantitation of SEM EBIC and CL Signals Using Monte Carlo Electron-Trajectory Simulations | 1994 | Scanning Vol. 16, pp. 78-86 |
article | URL |
| Abstract: A microcomputer Monte Carlo program simulates electron trajectories in solids and describes the distribution of energy deposited throughout the energy-dissipation (electron-hole pair generation) volume. From this distribution, the electron-be aminduced current or cathodoluminescence signal that will be generated can be calculated for the chosen beam conditions in a multilayer specimen of any geometry and compositions. The use of this program is illustrated by applications (1) to simulate curves of cathodoluminescence intensity versus beam energy for fitting to experimental data to evaluate materials and device parameters, (2) to calculate the energy deposited in each layer of a HEMT structure in which electron-be am-induced current studies are in progress, and (3) to the simulation of defect contrast linescan profiles which are compared to experimental observations. | |||||
BibTeX:
@article{scan94,
author = {Holt, D. B. and Napchan, E.},
title = {Quantitation of SEM EBIC and CL Signals Using Monte Carlo Electron-Trajectory Simulations},
journal = {Scanning},
year = {1994},
volume = {16},
pages = {78-86},
url = {http://www.mc-set.com/docs/papers/scan94.pdf}
}
|
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| Holt, D.B. & Napchan, E. | Quantifying Scanning Electron Microscopy of Semiconducting Materials | 1993 | Multinational Congress on Electron Microscopy | conference | URL |
| Abstract: Progress is being made in the quantification of SEM EBIC and CL through advances in instrumentation and in the application of Monte Carlo electron trajectory simulation to calculate signals as functions of SEM and materials parameters. Contrast simulation then becomes readily possible also. Recent developments in this field are outlined and some tasks for the future are pointed out. | |||||
BibTeX:
@conference{parma93,
author = {Holt, D. B. and Napchan, E.},
title = {Quantifying Scanning Electron Microscopy of Semiconducting Materials},
booktitle = {Multinational Congress on Electron Microscopy},
year = {1993},
url = {http://www.mc-set.com/docs/papers/parma93.pdf}
}
|
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| Holt, D.B., Napchan, E., Lazzarini, L., Urchulutegui, M. & Salviati, G. | Quantitative studies of beam-induced defects in III - V compounds by cathodoluminescence and transmission electron microscopy | 1994 | Materials Science and Engineering, () Vol. B24, pp. 130-134 |
article | URL |
| Abstract: Electron beam currents above about 1 pA induce long straight dislocations lying just below the surface in (001) wafers of GaAs and InP. These dislocations are of interest in themselves and are well situated for cathodoluminescence (CL) dark contrast studies. Microcomputer Monte Carlo electron trajectory simulation-based programs were written to calculate emitted CL intensities and to simulate defect CL contrast profiles. Series of simulations for increasing beam energies (penetration range) show that the dislocation contrast is a maximum for a certain accelerating voltage which enables the dislocation depth to be determined. The magnitude of the contrast for a given beam energy increases with increasing defect recombination strength which can therefore be identified. The possibility of finding the number of dislocations in individual dark line bundles is discussed. The results of further transmission electron microscopy observations on the beam-induced dislocations are also presented. | |||||
BibTeX:
@article{mseng94,
author = {Holt, D. B. and Napchan, E. and Lazzarini, L. and Urchulutegui, M. and Salviati, G.},
title = {Quantitative studies of beam-induced defects in III - V compounds by cathodoluminescence and transmission electron microscopy},
journal = {Materials Science and Engineering, ()},
year = {1994},
volume = {B24},
pages = {130-134},
url = {http://www.mc-set.com/docs/papers/mseng94.pdf}
}
|
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| Holt, D.B., Napchan, E., Reehal, H. & Toal, S. | SEM EBIC characterization of SiC/Si solar cells | 1999 | Vol. 164IOP Conference Series Number 164, pp. 703-706 |
conference | URL |
| Abstract: A number of experimental solar cells with SiC emitters and Si bases, varying in photovoltaic efficiency from 0.1 to 5.8 %, were examined by EBIC. Defect particles were observed in the cells using EBIC. Evidence was found that suggests that the top contacts on the 0.1 % cell were Schottky not ohmic in character. Quantitative EBIC linescans across these metal fingers were analysed to obtain values for L, the minority carrier diffusion length. | |||||
BibTeX:
@conference{msm99c,
author = {Holt, D. B. and Napchan, E. and Reehal, H. and Toal, S.},
title = {SEM EBIC characterization of SiC/Si solar cells},
booktitle = {IOP Conference Series Number 164},
publisher = {Institute of Physics, UK},
year = {1999},
volume = {164},
pages = {703-706},
url = {http://www.mc-set.com/docs/papers/msm99c.pdf}
}
|
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| Holt, D.B., Napchan, E.and Lazzarini, L., Salviati, G. & Urchulutegui, M. | Beam-induced dislocations and their CL contrast | 1993 | Vol. 134IOP Conference Series Number 134, pp. 661-666 |
conference | URL |
| Abstract: Dislocations induced by high SEM beam currents in GaAs were studied by TEM and emission CL. They were found to consist of bowed segments and confirmed to have [001] Burgers vectors. The capacity of different SEMs to induce dislocations varied greatly. Methods for recording CL contrast profiles and a Monte Carlo based program for CL calculations are presented. | |||||
BibTeX:
@conference{msm93,
author = {Holt, D. B. and Napchan, E.and Lazzarini, L. and Salviati, G. and Urchulutegui, M.},
title = {Beam-induced dislocations and their CL contrast},
booktitle = {IOP Conference Series Number 134},
publisher = {Institute of Physics, UK},
year = {1993},
volume = {134},
pages = {661-666},
url = {http://www.mc-set.com/docs/papers/msm93.pdf}
}
|
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| Klimo, O., Napchan, E. & Limpouch, J. | Monte Carlo calculations of X-rays generation for electron beams with energies up to 500 keVolts | 2003 | Vol. 180IOP Conference Series Number 180 |
conference | URL |
| Abstract: The MC-SET Monte Carlo program for simulation of electron trajectories is being improved by adding X-rays generation calculation for each electron trajectory step. The method uses the 3D (N = 100 elements per dimension) energy deposition matrix and an additional equivalent matrix of average electron energies. These two matrixes provide us all information about an electron energy deposition in the specimen and allow us to carry generalized shell ionization computations and to obtain the 3D distribution of K shell ionization. Simulation results include the number of K-alpha photons per steradian per electron flying out from a spot of electron beam incidence in a specified direction, and information about the depth generation. The simulation can be used for individual elements with different tilt angles and with electron energies up to 500 keV, and for multi-layered specimens. Simulation results are in good greement with experimental results and with other calculations. | |||||
BibTeX:
@conference{msm03,
author = {Klimo, O. and Napchan, E. and Limpouch, J.},
title = {Monte Carlo calculations of X-rays generation for electron beams with energies up to 500 keVolts},
booktitle = {IOP Conference Series Number 180},
publisher = {Institute of Physics, UK},
year = {2003},
volume = {180},
url = {http://www.mc-set.com/docs/papers/msm03.pdf}
}
|
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| Lahav, A. & Napchan, E. | Thin Films Thickness Measurement by Secondary Electrons Contrast [BibTeX] |
2007 | The 41st Annual Scientific Meeting of ISM | conference | URL |
BibTeX:
@conference{ism2007,
author = {Lahav, A. and Napchan, E.},
title = {Thin Films Thickness Measurement by Secondary Electrons Contrast},
booktitle = {The 41st Annual Scientific Meeting of ISM},
year = {2007},
url = {http://www.mc-set.com/docs/papers/ism2007.pdf}
}
|
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| Napchan, E. | Online Database of Experimental Electron Scattering Properties for SEM Users | 2007 | Microscopy and Analysis Vol. 2007, pp. 15-17 |
article | URL |
| Abstract: In recent years a large database has been collected from many experimental results on various aspects of electron-solid interactions, such as stopping powers, backscattered and secondary electron emission yields, the data format being a series of measurements for a specific parameter as a function of beam voltage. These data have provided useful observations on the variation of measured parameters as a function of beam voltage, and also of the spread in the measured values by different authors. A further use of the data is in X-ray microanalysis correction procedures, and for testing electron-matter simulation programs. This paper describes an online system created to display the experimental data, and to allow the addition of further experimental results to them. The system is openly available, and can be used by researchers interested in the results of interaction of an electron beam with a specimen. | |||||
BibTeX:
@article{micana07,
author = {Napchan, E.},
title = {Online Database of Experimental Electron Scattering Properties for SEM Users},
journal = {Microscopy and Analysis},
year = {2007},
volume = {2007},
pages = {15-17},
url = {http://www.mc-set.com/docs/papers/micana07.pdf}
}
|
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| Napchan, E. | Backscattered Electrons in the SEM [BibTeX] |
2001 | Microscopy and Analysis Vol. 2001, pp. 9-11 |
article | URL |
BibTeX:
@article{micana01,
author = {Napchan, E.},
title = {Backscattered Electrons in the SEM},
journal = {Microscopy and Analysis},
year = {2001},
volume = {2001},
pages = {9-11},
url = {http://www.mc-set.com/docs/papers/micana01.pdf}
}
|
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| Napchan, E. | Electron beam dissipation volume effects on lateral and depth probing of semiconducting layers | 2001 | Vol. 169IOP Conference Series Number 169 |
conference | URL |
| Abstract: Monte Carlo (MC) simulations of electron trajectories for multi -layered sample geometries are used for studying the depth and lateral resolution under various experimental conditions. The resulting three-dimensional beam energy dissipation data is used to evaluate depth and radial beam exposure information, which provides an insight into depth and lateral resolution of electron beam techniques. The application of such simulations to compound materials and the various methods used for calculating average parameter values are discussed. Different average value calculation methods can result in significantly different electron doses, the choice of which can not be made a priori without comparison to experimental data. | |||||
BibTeX:
@conference{msm01,
author = {Napchan, E.},
title = {Electron beam dissipation volume effects on lateral and depth probing of semiconducting layers},
booktitle = {IOP Conference Series Number 169},
publisher = {Institute of Physics, UK},
year = {2001},
volume = {169},
url = {http://www.mc-set.com/docs/papers/msm01.pdf}
}
|
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| Napchan, E. | Monte Carlo Simulation Of Electron Trajectories [BibTeX] |
1992 | European Microscopy And Analysis Vol. 1992, pp. 21-23 |
article | URL |
BibTeX:
@article{eumica92,
author = {Napchan, E.},
title = {Monte Carlo Simulation Of Electron Trajectories},
journal = {European Microscopy And Analysis},
year = {1992},
volume = {1992},
pages = {21-23},
url = {http://www.mc-set.com/docs/papers/eumica92.pdf}
}
|
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| Napchan, E. | Electron And Photon-Matter Interaction: Energy Dissipation And Injection Level | 1989 | Revue De Physique Appliquee Vol. 24(6), pp. C6-15 C6-29 |
article | URL |
| Abstract: Energy dissipation by a light or electron beam inside a specimen is the primary parameter responsible for generating signals used to characterize the sample under investigation. The commonly used semi-empirical descriptions of this energy dissipation profile are presented. Their limitations in dealing with particular experimental conditions, such as multi-layer specimens anQ--varying beam tilt angles, make it necessary to evaluate the beam-matter interaction parameters by methods such as Monte Carlo simulations. The physical principles of these simulations are introduced along with the presentation of computational details of a fast calculation program developed by the author, in particular for dealing with the evaluation of energy deposition: Some of the applications of calculated energy dissipation profiles and other data· calculated in the beam induced assessment of device properties are outlined, along with examples comparing simulation results to experimental data. | |||||
BibTeX:
@article{biads88,
author = {Napchan, E.},
title = {Electron And Photon-Matter Interaction: Energy Dissipation And Injection Level},
journal = {Revue De Physique Appliquee},
year = {1989},
volume = {24},
number = {6},
pages = {C6-15 C6-29},
url = {http://www.mc--set.com/docs/papers/biads88.pdf}
}
|
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| Young, R.J., Buxbaum, A., Peterson, B. & Schampers, R. | Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging | 2008 | ISTFA 2008 | conference | DOI URL |
| Abstract: Scanning transmission electron microscopy with scanning electron microscopes (SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques. | |||||
BibTeX:
@conference{young08,
author = {Young, R. J. and Buxbaum, A. and Peterson, B. and Schampers, R.},
title = {Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging},
booktitle = {ISTFA 2008},
publisher = {ASM International},
year = {2008},
url = {http://www.mc-set./docs/papers/young08.pdf},
doi = {http://dx.doi.org/10.1361/cp2008istfa320}
}
|
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Created by JabRef on 09/02/2009.